Infineon IPD200N15N3: A High-Performance 150V OptiMOS Power Transistor for Demanding Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in power electronics places immense demands on switching components. At the heart of many advanced automotive and industrial systems, the Infineon IPD200N15N3 stands out as a premier 150V N-channel power MOSFET engineered to meet these rigorous challenges. Leveraging Infineon's proven OptiMOS™ technology, this transistor sets a new benchmark for performance in its voltage class.

A key strength of the IPD200N15N3 is its exceptionally low typical on-state resistance (RDS(on)) of just 2.0 mΩ. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks and more compact designs. This is further complemented by its outstanding switching performance, enabling high-frequency operation that allows engineers to shrink the size of passive components like inductors and capacitors.

Designed with mission-critical applications in mind, the IPD200N15N3 is AEC-Q101 qualified, ensuring it meets the stringent quality and reliability standards required for automotive environments. It is an ideal solution for demanding automotive applications such as:

Electric Power Steering (EPS) systems

Braking systems

48V board net and mild-hybrid systems (MHEV)

DC-DC converters and motor control units

Beyond the automotive sector, its robust characteristics make it equally suitable for challenging industrial use cases. These include high-current DC-DC converters, server and telecom power supplies, solar inverters, and robust motor drives for factory automation, where durability and efficiency are non-negotiable.

The device also features a low gate charge (QG) and is optimized for 10V gate drive, making it easy to control with standard driver ICs. Its high peak current capability and avalanche ruggedness ensure operational stability even under the most stressful transient conditions.

ICGOOODFIND: The Infineon IPD200N15N3 is a top-tier power MOSFET that exemplifies the advancements of OptiMOS™ technology. Its combination of ultra-low RDS(on), high switching speed, and automotive-grade ruggedness makes it an superior choice for designers aiming to push the boundaries of efficiency and power density in next-generation 48V automotive systems and high-performance industrial equipment.

Keywords: OptiMOS™, Low RDS(on), AEC-Q101 Qualified, Automotive Applications, High-Efficiency