Infineon BSS84PH6327 P-Channel MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon BSS84PH6327 is a popular P-Channel enhancement mode MOSFET housed in a compact SOT-23 package. Designed with Infineon's advanced proprietary planar technology, this component is optimized for high efficiency and low power dissipation in a wide range of applications. Its primary role is to function as a reliable electronic switch or amplifier for low-voltage, low-current circuits.
Datasheet Overview and Key Specifications
Understanding the critical parameters from the datasheet is essential for effective circuit design and component selection. The BSS84PH6327 is characterized by its low threshold voltage, making it suitable for use in systems with lower gate drive voltages, such as those powered by 3.3V or 5V logic.
Key absolute maximum ratings and electrical characteristics include:
Drain-Source Voltage (VDS): -50 V
Continuous Drain Current (ID): -130 mA
On-Resistance (RDS(on)): Typically 3.5 Ω at VGS = -10 V, ID = -50 mA
Gate-Threshold Voltage (VGS(th)): Typically -1.5 V
Package: SOT-23 (3-pin)
These specifications make it an ideal choice for load switching, power management, and interface functions in portable devices, consumer electronics, and automotive systems.
Typical Application Circuit
A fundamental application for the BSS84PH6327 is as a high-side switch. In this configuration, the source is connected to the positive supply rail (VDD), the drain is connected to the load, and the load's other terminal is connected to ground.
To turn the MOSFET on, the gate must be pulled to a voltage significantly lower than the source. For a microcontroller-based system:
1. The gate is driven by a GPIO pin through a series resistor (e.g., 10kΩ).
2. To turn the load ON, the microcontroller output is set to a logic LOW (0V), creating the necessary negative VGS to enhance the channel.
3. To turn the load OFF, the microcontroller output is set to a logic HIGH (e.g., 3.3V), bringing VGS close to zero and shutting off the device.
4. A pull-up resistor from the gate to the source (VDD) is often used to ensure the MOSFET remains off when the microcontroller pin is in a high-impedance state (e.g., during reset).
This simple circuit allows a low-voltage logic signal to control a higher voltage power rail with minimal parts and excellent isolation between the control unit and the load.
Replacement and Cross-Reference Guide
When the BSS84PH6327 is unavailable, selecting a suitable replacement requires careful comparison of key parameters to ensure circuit compatibility and performance.
Critical parameters to match:
1. Channel Type: Must be P-Channel.
2. Drain-Source Voltage (VDS): The replacement's VDS must be at least equal to, or preferably higher than, the original.
3. Continuous Drain Current (ID): Should meet or exceed the original's rating.
4. On-Resistance (RDS(on)): A similar or lower value is crucial for efficiency and minimal voltage drop.
5. Gate-Threshold Voltage (VGS(th)): Must be compatible with the driving circuit's voltage levels.
6. Package: Must be the same (SOT-23) for PCB compatibility.
Potential replacement options often include:
ON Semiconductor NVR1C001N03: Offers similar characteristics in the same package.
Diodes Incorporated DMG3415U: Another strong candidate with comparable specs.
Vishay Si2301CDS: A common alternative for low-power switching.
Always consult and compare the full datasheets of both the original and the potential replacement before committing to a design change.
ICGOODFIND: The Infineon BSS84PH6327 stands out as a highly efficient and robust P-Channel MOSFET for low-power applications. Its excellent electrical characteristics, combined with its industry-standard SOT-23 package, make it a versatile and widely adopted component for designers. When a replacement is needed, a meticulous focus on matching VDS, ID, RDS(on), and VGS(th) is paramount for ensuring system reliability and performance.
Keywords: P-Channel MOSFET, Load Switch, SOT-23, Low Power Dissipation, Cross-Reference
