**HMC602LP4ETR: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier from 17 to 24 GHz**

The **HMC602LP4ETR** represents a state-of-the-art solution for low noise amplification in the upper Ku-band and K-band frequency spectrum. This **Monolithic Microwave Integrated Circuit (MMIC)** is engineered to deliver exceptional performance from **17 to 24 GHz**, making it an indispensable component for a wide array of modern microwave systems, including point-to-point radios, satellite communications, military radar, and 5G infrastructure.

Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, the amplifier achieves an outstanding balance of low noise and high gain. It boasts a remarkably **low noise figure of 1.8 dB**, which is critical for preserving the integrity of weak received signals in the very first stage of a receiver chain. This ensures superior system sensitivity, allowing for clearer signal reception and longer possible link distances.

Complementing its low noise performance is a high **small-signal gain of 22 dB**. This substantial gain effectively amplifies desired signals well above the noise floor of subsequent stages in the system, such as mixers and frequency converters. Furthermore, the HMC602LP4ETR offers excellent linearity, with an output IP3 of +26 dBm, minimizing distortion and intermodulation products in the presence of strong interfering signals.

The amplifier is designed for ease of integration into a variety of high-frequency assemblies. It is housed in a compact, RoHS-compliant, 4x4 mm LP4 leadless package. The device requires a positive bias supply and incorporates an active bias circuit for stable performance over temperature. It is also internally matched to 50 Ohms at both its input and output, simplifying board-level design and reducing the need for external matching components.

**ICGOOODFIND:** The HMC602LP4ETR stands out as a premier choice for designers seeking **high gain and ultra-low noise** in the critical 17-24 GHz band. Its robust **GaAs pHEMT technology**, combined with its high linearity and simple integration, makes it a highly reliable and efficient MMIC LNA for demanding commercial and aerospace/defense applications.

**Keywords:** Low Noise Amplifier (LNA), MMIC, GaAs pHEMT, Ku-band, High Gain.