Infineon IPD90N06S405ATMA2: High-Performance N-Channel MOSFET for Automotive and Industrial Applications
The demand for robust, efficient, and reliable power switching solutions is paramount in modern automotive and industrial systems. Addressing this need, the Infineon IPD90N06S405ATMA2 stands out as a high-performance N-Channel power MOSFET engineered to excel in the most demanding environments. This component is a testament to Infineon's expertise in power semiconductors, offering a blend of low on-state resistance, high switching speed, and exceptional durability.
A key feature of this MOSFET is its extremely low typical on-state resistance (RDS(on)) of just 4.2 mΩ at a gate-source voltage of 10 V. This exceptionally low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and improved overall performance. Whether it's managing power in an automotive engine control unit (ECU), a DC-DC converter, or driving heavy industrial motors, the low RDS(on) ensures that energy is wasted as little as possible.
Furthermore, the device is characterized by its high current handling capability, supporting up to 90 A of continuous drain current. This makes it suitable for high-power applications such as solenoid and valve control, motor drives, and power distribution systems. The optimized switching performance also allows for operation at higher frequencies, which is essential for designing compact and lightweight power supplies and inverters.
Designed with robustness in mind, the IPD90N06S405ATMA2 is AQG-324 qualified, making it an ideal choice for automotive applications. It meets the stringent reliability standards required for systems that must operate flawlessly under harsh conditions, including wide temperature variations, high humidity, and constant vibration. This makes it perfect for use in engine management, transmission control, electric power steering (EPS), and battery management systems (BMS).
The MOSFET is housed in a TO-252 (DPAK) package, which offers an excellent balance between compact size and efficient thermal performance. This package is widely used and allows for effective heat dissipation, contributing to the device's long-term reliability and stability in continuous operation.
In industrial contexts, its robustness and high performance make it a preferred component for power tools, forklifts, automated guided vehicles (AGVs), and industrial automation equipment where efficiency and reliability are non-negotiable.
ICGOODFIND: The Infineon IPD90N06S405ATMA2 is a superior N-Channel MOSFET that sets a high benchmark for power switching components. Its combination of ultra-low RDS(on), high current capability, and automotive-grade robustness makes it an indispensable solution for designers aiming to enhance efficiency and reliability in next-generation automotive and industrial power systems.
Keywords: Automotive-Grade, Low RDS(on), High Current Capability, Power MOSFET, Robust Performance.
